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R6025FNZ1 nch 600v 25a power mosfet 4) drive circuits can be simple. 2) fast switching speed. tape width (mm) - 3) gate-source voltage (v gss ) guaranteed to be ? 30v. l application reel size (mm) 6) pb-free lead plating ; rohs compliant tube - type packaging 450 taping code 600v 0.18 w 150w 25a 5) parallel use is easy. v dss r ds(on) (max.) i d p d 1) low on-resistance. l outline l inner circuit l packaging specifications to-247 v gss ? 100 continuous drain current basic ordering unit (pcs) pulsed drain current gate - source voltage parameter t c = 100c switching power supply ? 25 value t c = 25c symbol l absolute maximum ratings (t a = 25c) drain - source voltage c9 marking R6025FNZ1 l features unit 600 v dss i d *1 a v v ? 30 v/ns 150 reverse diode dv/dt i ar *3 range of storage temperature t stg power dissipation (t c = 25c) c w junction temperature a dv/dt *5 15 - 55 to + 150 i d,pulse *2 i d *1 ? 12 a a t j c mj e ar *4 avalanche energy, single pulse avalanche energy, repetitive avalanche current 12.5 e as *3 9.7 mj p d 150 42.1 (1) gate (2) drain (3) source * 1 body diode (1) (3) (2) 1/13 2013.10- rev.a datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved.
R6025FNZ1 drain - source voltage slope dv/dt v ds = 480v, i d = 25a - typ. symbol conditions values l absolute maximum ratings l thermal resistance thermal resistance, junction - case parameter max. parameter i gss - na t j = 125c v v 0.1 10 ? 100 - - t j = 25c m a ma drain - source avalanche breakdown voltage - 600 conditions symbol v (br)ds - min. values typ. 100 - zero gate voltage drain current v (br)dss v gs = 0v, i d = 12.5a v gs = 0v, i d = 1ma i dss unit t sold r thja min. r thjc symbol - unit c/w values v/ns t j = 125 ? c 50 - 0.83 - c - 265 c/w unit max. - 700 - - 30 gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 3 gate - source leakage current v gs = ? 30v, v ds = 0v - - v 5 thermal resistance, junction - ambient soldering temperature, wavesoldering for 10s l electrical characteristics (t a = 25c) parameter drain - source breakdown voltage v ds = 600v, v gs = 0v w gate input resistance r g f = 1mhz, open drain - 3.3 - static drain - source on - state resistance w t j = 25c - 0.14 0.18 t j = 125c - r ds(on) *6 v gs = 10v, i d = 12.5a 0.28 - 2/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 *1 limited only by maximum temperature allowed. *2 p w ? 10 m s, duty cycle ? 1% *3 l ? 500 m h, v dd = 50v, r g = 25 w , starting t j = 25c *4 l ? 500 m h, v dd = 50v, r g = 25 w , starting t j = 25c, f = 10khz *5 reference measurement circuits fig.5-1. *6 pulsed 7.1 - v gate plateau voltage v (plateau) v dd ? 300v, i d = 25a - - gate - drain charge q gd *6 parameter z gate charge characteristics (t a = 25c) rise time t r *6 i d = 12.5a symbol values 115 v gs = 10v - 25 - min. 85 - conditions total gate charge gate - source charge q gs *6 i d = 25a q g *6 v dd ? 300v 35 - - typ. ns 150 300 72 144 - - max. unit nc - r g = 10 w - turn - off delay time t d(off) *6 r l = 24 w - fall time t f *6 - pf - 111 - - 364 turn - on delay time t d(on) *6 v dd ? 300v, v gs = 10v - effective output capacitance, energy related effective output capacitance, time related c o(er) c o(tr) v gs = 0v v ds = 0v to 480v 57 3500 - g fs *6 v ds = 10v, i d = 12.5a pf - c rss f = 1mhz - 45 - 2200 max. reverse transfer capacitance z electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. 18 transconductance input capacitance 9 output capacitance c oss v ds = 25v - - s c iss v gs = 0v - 3/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 peak reverse recovery current parameter symbol conditions values reverse recovery charge t rr *6 - - 9 - q rr *6 i rrm *6 i s *1 i sm *2 t c = 25c l body diode electrical characteristics (source-drain)(t a = 25c) - 0.53 - m c v sd *6 v gs = 0v, i s = 25a typ. forward voltage reverse recovery time unit min. max. inverse diode continuous, forward current inverse diode direct current, pulsed - i s = 25a di/dt = 100a/ m s 120 - - - 0.0182 k/w ws/k r th2 0.171 c th2 0.0944 0.0833 c th1 r th1 r th3 0.579 c th3 0.51 peak rate of fall of reverse recovery current di rr /dt - value l typical transient thermal characteristics 1150 - symbol value unit symbol - a a/ m s - t j = 25c unit - a a 1.5 v ns 100 25 4/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : t j [ c] fig.2 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25oc single pulse r th(ch - a)(t) = hn (t) ?b r th(ch - a) r th(ch - a) = 30oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 5/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 0 2 4 6 8 10 12 14 16 0.01 0.1 1 10 100 t a = 25oc v dd = 50v, r g = 25 w v gf = 10v, v gr = 0v 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 fig.3 avalanche current vs inductive load avalanche current : i ar [a] coil inductance : l [mh] fig.4 avalanche power losses avalanche power losses : p ar [w] frequency : f [hz] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [oc] 0 2000 4000 6000 8000 10000 12000 1.0e+04 1.0e+05 1.0e+06 t a =25oc 6/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 0 5 10 15 20 25 0 10 20 30 40 50 t a =150oc pulsed v gs = 10.0v v gs = 4.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v v gs = 5.5v 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 t a =150oc pulsed v gs = 10.0v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v v gs = 5.5v v gs = 4.5v 0 5 10 15 20 25 0 10 20 30 40 50 t a =25oc pulsed v gs = 10.0v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v fig.6 typical output characteristics(i) fig.7 typical output characteristics(ii) fig.8 t j = 150 c typical output characteristics(i) fig.9 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 0 5 10 15 20 25 0.0 1.0 2.0 3.0 4.0 5.0 t a =25oc pulsed v gs = 10.0v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v 7/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 500 550 600 650 700 750 800 850 900 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 v ds = 10v plused t a =125oc t a =75oc t a =25oc t a = - 25oc 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 v ds = 10v i d = 1ma plused 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v plused t a = - 25oc t a =25oc t a =75oc t a =125oc fig.11 typical transfer characteristics fig.10 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] drain current : i d [a] fig.12 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ r c ] fig.13 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] junction temperature : t j [ r c ] gate - source voltage : v gs [v] 8/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 v gs = 10v plused i d = 25a i d = 12.5 a 0.01 0.1 1 10 0.01 0.1 1 10 100 v gs = 10v plused t a =125oc t a =75oc t a =25oc t a = - 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 12 14 16 18 20 i d = 25a i d = 12.5 a t a =25oc pulsed fig.14 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.15 static drain - source on - state resistance vs. junction temperature static drain - source on - state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.16 static drain - source on - state resistance vs. drain current static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 9/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 c oss c rss c iss t a =25oc f = 1mhz v gs = 0v fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.19 switching characteristics switching time : t [ns] drain current : i d [a] fig.20 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [uj] fig.18 coss stored energy drain - source voltage : v ds [v] 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) v dd P 300v v gs = 10v r g = 10 : t a = 25oc pulsed 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 t a = 25oc v dd = 300v i d = 25a pulsed 0 2 4 6 8 10 12 14 16 18 20 0 200 400 600 t a =25oc 10/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l electrical characteristic curves 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 v gs =0v pulsed t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.21 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.22 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 10 100 1000 0.1 1 10 100 t a =25 oc v gs = 0v di / dt = 100a / m s pulsed 11/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt waveform fig.5-1 di/dt measurement circuit fig.5-2 di/dt waveform 12/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
R6025FNZ1 l dimensions (unit : mm) dimension in mm / inches to - 247 13/13 2013.10 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet min max min max a 4.83 5.21 0.190 0.205 a1 2.29 2.54 0.090 0.100 a2 1.91 2.16 0.075 0.085 b 1.14 1.40 0.045 0.055 b1 1.91 2.20 0.075 0.087 b2 2.92 3.20 0.115 0.126 c 0.61 0.80 0.024 0.031 d 20.80 21.34 0.819 0.840 d1 17.43 17.83 0.686 0.702 e 15.75 16.13 0.620 0.635 e n l 19.81 20.57 0.780 0.810 l1 3.81 4.32 0.150 0.170 p 3.55 3.65 0.140 0.144 q 5.59 6.20 0.220 0.244 s 3.00 3.000 6.15 0.240 dim milimeters inches 5.45 0.215
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)

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